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(R)
STD616A
HIGH VOLTAGE NPN POWER TRANSISTOR
s
s s s
s
s
REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
3 2 1
3 1
s
APPLICATIONS: SWITCH MODE POWER SUPPLIES DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability.
IPAK TO-251 (Suffix "-1")
DPAK TO-252 (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1000 450 12 1.6 2.4 0.8 1.2 20 -65 to 150 150 Unit V V V A A A A W
o o
C C
June 2003
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STD616A
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 6.25
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES Parameter Collector Cut-off Current (V BE = 0 V) Test Conditions V CE = 1000 V V CE = 1000 V I C = 100 mA T j = 125 o C L = 25 mH 450 Min. Typ. Max. 50 0.5 Unit A mA V
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat) V BE(sat) h FE Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain
I E = 1 mA I C = 250 mA I C = 0.8 A I C = 250 mA I C = 0.8 A IC IC IC IC = = = = 200 A 300 mA 480 mA 1.6 A I B = 65 mA I B = 250 mA I B = 65 mA I B = 250 mA V CE = 5 V V CE = 5 V V CE = 5 V V CE = 5 V I C = 250 mA I B2 = -130 mA
12 0.3 0.5 1 1.2 17 25 12 4 0.2 5 0.65 1 2.5 0.35 5 0.5 2.5 0.25
V V V V V
t on ts tf t on ts tf ts tf ts tf
RESISTIVE LOAD Turn On Time Storage Time Fall Time RESISTIVE LOAD Turn On Time Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time
V CC = 250 V I B1 = 65 mA
s s s s s s s s s s
V CC = 250 V I B1 = 160 mA
I C = 0.8 A I B2 = -0.4 A
V cl = 300 V I B1 = 65 mA L = 200 H V cl = 300 V I B1 = 160 mA L = 200 H
I C = 250 mA I B2 = -130 mA I C = 0.8 A I B2 = -0.4 A
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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STD616A
Safe Operating Area Derating Curve
Reverse Biased SOA
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STD616A
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 0.45 0.48 6.00 6.40 4.40 15.90 9.00 0.80 0.80 10o 0.30 0.95 0.60 0.60 6.20 6.60 4.60 16.30 9.40 1.20 1.00 0.018 0.019 0.237 0.252 0.173 0.626 0.354 0.031 0.031 10o 2.20 0.90 0.70 0.64 5.20 mm TYP. MAX. 2.40 1.10 1.30 0.90 5.40 0.85 0.012 0.037 0.024 0.024 0.244 0.260 0.181 0.642 0.370 0.047 0.039 MIN. 0.087 0.035 0.028 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.035 0.213 0.033
P032N_E
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STD616A
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0
o
DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35
inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8
o
TYP.
TYP.
MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
0.8 0.024 0
o
0.039 0o
P032P_B
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STD616A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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